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808nm 100W QCW Unmounted Laser Diode Bar Direct Material Processing Diode Laser Bars

Categories Laser Diode Bar
Brand Name: HTOE
Model Number: LDAQ1-0808-0100
Place of Origin: Beijing, China
MOQ: 50 pcs
Price: Negotiable
Payment Terms: T/T
Supply Ability: 100 pcs per month
Delivery Time: 15-25 working days
Packaging Details: Paper Box
Operation Mode: QCW
Output Power: 100 watt
Center Wavelength: 808±5 nm
Fill Factor: 87%
Number of Unmounted Single Emitters: 100
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808nm 100W QCW Unmounted Laser Diode Bar Direct Material Processing Diode Laser Bars

100 watt High Power Laser Diode Bar , 808 nm QCW Laser Diode Unmounted Bar

Semiconductor lasers are the centerpiece of most of today’s industrial laser systems. Whether direct material processing or optical pumping of solid-state lasers, fiber lasers or disc lasers, the unmounted single emitters and bars are the key component for the initial conversion of electrical energy into light.

HTOE has been focusing on the semiconductor wafer technology from 1998, delivers the multimode high power at wavelengths between 635 and 1064nm.

  • High Power multimode unmounted bars up to 40W CW and 200W QCW output
  • Unmounted single emitters up to 2W CW Power
  • Available wavelengths include 635nm, 650nm, 808nm, 980nm and 1064nm

Parameters(25℃)

ParameterUnitLDAQ1-0808-0100
Optical ParameterOperation Mode-QCW
Output Power PoW100
Center Wavelength λcnm808 ± 5
GeometricalFill Factor-87%
Number of Unmounted Single Emitters-100
Electrical ParameterSlope Efficiency EsW/A≥1.2
Threshold Current IthA≤20
Operating Current IfA≤100
Operating Voltage VfV≤3

Notice

1. Item notice: LDAQ1( item model)-****( center wavelength)-****( output power).

2. Data sheet is based on the result of testing under 25℃,pulse width 200μs, frequency 1-100Hz, maximum duty cycle 2%, and typical application 0.4%.

3. Data sheet is based on the CS package testing.

4. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.


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