670nm Single Emitter Diode Laser High Electro - Optical Effiency 300mw Power

300mW Output Power 670nm Wavelength Packaged Single Emitter Diode Laser

As one of HTOE LDM series packaged single emitters, LDM-0670-300m-*3 is Fabry-Perot cavity semiconductor laser diode based on Quantum-well epitaxy and ridge waveguide structure design. HTOE packaged single emitters provide excellent reliability and performance. Center wavelength includes 635nm, 650nm, 670nm, 785nm, 808nm, 830nm, 9xxnm and 1064 nm. Package designs include TO mounts, CoS mounts, C-mounts and F-mounts. Provide beam shaping services like fast-axis compression according to customer demands

A laser diode is electrically a PIN diode. The active region of the laser diode is in the intrinsic (I) region, and the carriers (electrons and holes) are pumped into that region from the N and P regions respectively. While initial diode laser research was conducted on simple P-N diodes, all modern lasers use the double-hetero-structure implementation, where the carriers and the photons are confined in order to maximize their chances for recombination and light generation.

Features

• 300m watt output power
• 670nm center wavelength
• Beam shaping services
• C-mount and 3mm in TO package options
• High electro-optical effiency
• High reliablity

Parameters(20℃)

Package Information

C-Mount Package

TOØ3 Package

Function Curve

P-I-V Curve Spectral Curve

Notice

1. Item model notice: LDM (Item model), 0670 (Center wavelength), 300m (Output power), *3 (Heat sink structure and item width).
2. Data in the sheet are all based on C-mount package heat sink testing.

3. Please store or use the LD under dry and air flow ambient.To avoid any situation of condensation which will damage the LD.

4. Working under high temperature will increase the threshold current and decrease the efficiency conversion,speed up the aging of the LD.

5. The exceed power output will speed up the aging of the LD.

6. For more information, please contact Hi-Tech Optoelectronics Co., Ltd.

Hi-Tech Optoelectronics Co., Ltd. is a wholly-owned subsidiary of CECEP, is a high-tech enterprise established on the basis of National Optoelectronic Engineering Research Center.

• Established in 1999
• Registered Capital：227 million RMB
• Located in Shahe Industrial Park, Beijing
• Employees：~180
• Products: Semiconductor Lasers

Headquarter in Beijing：

• Over 3000m² of manufacturing space, and more than 1500m² clean room with class 1,000 and 10,000 ；
• The new factory planned with 11,000m², and under construction now.

R&D Platform

• National Optoelectronic Engineering Research Center
• Post-doctoral Research Center
• Engineering Technology Research Institute Optoelectronics Branch of China Energy Conservation Group

More than 30 core patents：

• Ep-Wafer Structure Design
• COMD control
• Electrode process
• Chip process
• Chip packaging
• Beam shaping
• Fiber coupling

Leading provider of laser diodes and laser-based solutions in China.