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| Categories | General Purpose Rectifier Diode |
|---|---|
| Brand Name: | IR |
| Model Number: | IRF640N |
| Place of Origin: | CHINA |
| MOQ: | 10 PCS |
| Price: | Negotiation |
| Payment Terms: | T/T, Western Union ， ESCROW |
| Supply Ability: | 10000PCS |
| Delivery Time: | STOCK |
| Packaging Details: | TUBE |
| Categories: | Transistors - FETs, MOSFETs - Single |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 200V |
| Current - Continuous Drain (Id) @ 25°C: | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 150 mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 67nC @ 10V |
IRF640N General Purpose Rectifier Diode N-Channel 200V 18A (Tc) 150W (Tc) Through Hole TO-220AB
Advanced Process Technology Dynamic dv/dt Rating 175°C Operating
Temperature Fast Switching Fully Avalanche Rated Ease of
Paralleling Simple Drive Requirements
Fifth Generation HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low
on-resistance per silicon area. This benefit, combined with the
fast switching speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications. The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation levels to
approximately 50 watts. The low thermal resistance and low package
cost of the TO-220 contribute to its wide acceptance throughout the
industry. The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible onresistance in any existing
surface mount package. The D2Pak is suitable for high current
applications because of its low internal connection resistance and
can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF640NL) is available for lowprofile
application.
www.irf.com 1
| Product Attributes | Select All |
| Categories | Discrete Semiconductor Products |
| Transistors - FETs, MOSFETs - Single | |
| Manufacturer | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tube |
| Part Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 150 mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 67nC @ 10V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1160pF @ 25V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
Deli electronics tehcnology co ltd
www.icmemorychip.com
Email:sales3@deli-ic.com
Skype:hkdeli881
TEL:86-0755-82539981
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