TK10P60W Power Mosfet Transistor MOSFETs Silicon N-Channel MOS

MOSFETs Silicon N-Channel MOS (DTMOS)

TK10P60W

Applications

• Switching Voltage Regulators

Features

(1) Low drain-source on-resistance: R_DS(ON) = 0.327 Ω (typ.)

by used to Super Junction Structure : DTMOS

(2) Easy to control Gate switching

(3) Enhancement mode: V_th = 2.7 to 3.7 V (V_DS = 10 V, I_D = 0.5 mA)

Packaging and Internal Circuit

Absolute Maximum Ratings (Note) (Ta = 25℃ unless otherwise specified)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Note

1: Ensure that the channel temperature does not exceed 150℃. Note

2: VDD = 90 V, Tch = 25℃ (initial), L = 33.9 mH, RG = 25 Ω, IAR = 2.5 A

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