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HJ44H11 trench power mosfet electrical ic Power Mosfet Transistor NPN EPITAXIAL PLANAR TRANSISTOR

Categories Power Mosfet Transistor
Brand Name: Anterwell
Model Number: HJ44H11
Certification: new & original
Place of Origin: original factory
MOQ: 10pcs
Price: Negotiate
Payment Terms: T/T, Western Union, Paypal
Supply Ability: 8600pcs
Delivery Time: 1 day
Packaging Details: Please contact me for details
Collector- Emitter Voltage: 80 V
Emitter-Base Voltage: 5 V
Collector Current: 8 A
Base Current: 5 A
Junction Temperature: +150 ℃
Storage Temperature: -55~+150 ℃
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HJ44H11 trench power mosfet electrical ic Power Mosfet Transistor NPN EPITAXIAL PLANAR TRANSISTOR


HJ44H11 NPN SILICON TRANSISTOR

NPN EPITAXIAL PLANAR TRANSISTOR


„DESCRIPTION

The UTC HJ44H11 is designed for such applications as: series, shunt and switching regulators; output and driver stages of amplifiers operating at frequencies from DC to greater than 1MHz; low and high frequency inverters/converters; and many others.


ABSOLUTE MAXIMUM RATINGS (TA=25℃)

PARAMETERSYMBOLRATINGSUNIT
Collector- Emitter VoltageVCEO80V
Collector-Emitter VoltageVCES80V
Emitter-Base VoltageVEBO5V
Collector CurrentIC8A
Base CurrentIB5A
Power Dissipation (TC=25℃)SOT-223PD5W
TO-22065W
TO-25220W
Junction TemperatureTJ+150
Storage TemperatureTSTG-55~+150

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.



TYPICAL CHARACTERISTICS


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