STRG6653 Power Mosfet Transistor OFF - LINE QUASI - RESONANT FLYBACK SWITCHING REGULATOR

STR-G6651

OFF-LINE QUASI-RESONANT FLYBACK SWITCHING REGULATOR

The STR-G6651 is specifically designed to satisfy the requirements for increased integration and reliability in off-line quasi-resonant flyback converters. This device incorporates the primary control and drive circuit with a discrete avalanche-rated power MOSFET.

Cycle-by-cycle current limiting, under-voltage lockout with hysteresis, over-voltage protection, and thermal shutdown protects the power supply during the normal overload and fault conditions. Over-voltage protection and thermal shutdown are latched after a short delay. The latch may be reset by cycling the input supply. Low-current startup and a low-power standby mode selected from the secondary circuit completes a comprehensive suite of features. The device is provided in a five-pin over-molded TO-220 style package, affording dielectric isolation without compromising thermal characteristics. Two lead forms are available (with and without the suffix ‘-LF’) to accommodate printed wiring board layout or mechanical constraints.

Proven in substantial volumes, the STR-G6651 is a robust low-risk solution for off-line power supplies particularly where management of EMI at the source is a significant element of the system design.

FEATURES

■ Quasi-Resonant Operation

■ Output Power to 66 W

■ Low-Loss, Pulse-Ratio-Control Standby Mode

■ Temperature-Compensated Pulse-by-Pulse Over-Current Protection

■ Latched Over-Voltage and Thermal Protection

■ Under-Voltage Lockout with Hysteresis

■ Active Low-Pass Filter for Enhanced Light-Load Stability

■ Switched Attenuation of Leading-Edge Current-Sensing Signal

■ Regulated Soft Gate Drive

■ Adjustable Switching Speed for EMI Control

■ Overmolded Five-Pin Package

ABSOLUTE MAXIMUM RATINGS at TA = +25°C

Control Supply Voltage, VIN . . . . . . . 35 V

Drain-Source Voltage, V_DS . . . . . . . . 650 V

Drain Current, ID

continuous . . . . . . . . . . . . . . . . . . 2.7 A

single-pulse, tw ≤ 1 ms . . . . . . . . 7.2 A

Avalanche Energy, E_AS

single-pulse . . . . . . . . . . . . . . . 158 mJ

Over-Current Protection Voltage Range,

V_OCP . . . . . . . . . . . . . . . -0.3 V to +6 V

Insulation RMS Voltage,

V_WM(RMS) . . . . . . . . . . . . . . . . . . 2000 V

Package Power Dissipation, P_D

control (V_IN x I_IN(ON)) . . . . . . . . . 0.8 W

total . . . . . . . . . . . . . . . . . . . See Graph

FET Channel Temperature, TJ . . . +150°C

Internal Frame Temperature, TF . . +125°C

Operating Temperature Range,

T_A . . . . . . . . . . . . . . . -20°C to +125°C

Storage Temperature Range,

T_S . . . . . . . . . . . . . . . -40°C to +125°C

FUNCTIONAL BLOCK DIAGRAM

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