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NDT456P Rectifier Diode P-Channel Enhancement Mode Field Effect Transistor

Categories Rectifier Diode
Brand Name: FAIRCHILD
Model Number: NDT456P
Certification: Original Factory Pack
Place of Origin: Philippines
MOQ: 20
Price: Negotiate
Payment Terms: T/T, Western Union,Paypal
Supply Ability: 20000
Delivery Time: 1
Packaging Details: please contact me for details
Drain-Source Voltage: 30 V
Gate-Source Voltage: ±20 V
Drain Current: ±7.5 A
Operating and Storage Temperature Range: -65 to 150 °C
Thermal Resistance, Junction-to-Ambien: 42 °C/W
Thermal Resistance, Junction-to-Case: 12 °C/W
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NDT456P Rectifier Diode P-Channel Enhancement Mode Field Effect Transistor

NDT456P P-Channel Enhancement Mode Field Effect Transistor


Features

♦-7.5 A, -30 V. RDS(ON) = 0.030 W @ VGS = -10 V RDS(ON) = 0.045 W @ VGS = -4.5 V

♦High density cell design for extremely low RDS(ON)

♦High power and current handling capability in a widely used surface mount package.


General Description

Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management, battery powered circuits, and DC motor control.


SymbolParameterNDT456PUnits
VDSSDrain-Source Voltage-30V
VGSSGate-Source Voltage±20V
TJ ,TSTGOperating and Storage Temperature Range65 to 150°C
RqJAThermal Resistance, Junction-to-Ambient (Note 1a)42°C/W
RqJCThermal Resistance, Junction-to-Case (Note 1)12°C/W

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