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YJJ S1337-16BQ Low Capacitance Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

Categories Infrared Photoelectric Sensor
Brand Name: HAMAMATSU
Model Number: S1337-16BQ
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 2200
Delivery Time: 3 days
Packaging Details: piping
Photosensitivity (typical value): 0.5A /W
Dark current (Max.): 50 pA
Rise time (typical value): 0.2μs
Junction capacitance (typical): 65 pF
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YJJ S1337-16BQ Low Capacitance Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

Product Description:

S1337-16BQ Low Capacitance Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands


Features:

Receiving surface 5.9 × 1.1mm

Encapsulated ceramics

Package category --

Refrigeration uncooled type

Reverse voltage (Max.) 5 V

Spectral response range 190 to 1100 nm

Maximum sensitivity wavelength (typical value) 960 nm

Photosensitivity (typical value) 0.5A /W

Dark current (Max.) 50 pA

Rise time (typical value) 0.2μs

Junction capacitance (typical) 65 pF

Noise equivalent power (typical value) 1.0×10-14 W/Hz1/2

Typical values of measurement conditions Ta=25°C, photosensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated


Specifications:

Spectral response range190 to 1100 nm
Maximum sensitivity wavelength (typical value)960 nm
Photosensitivity (typical value)0.5A /W
Dark current (Max.)50 pA


Quality YJJ S1337-16BQ Low Capacitance Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands for sale
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