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Categories | Infrared Photoelectric Sensor |
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Brand Name: | HAMAMATSU |
Model Number: | S1337-16BQ |
Place of Origin: | Japan |
MOQ: | 1 |
Payment Terms: | L/C, D/A, D/P, T/T, Western Union, MoneyGram |
Supply Ability: | 2200 |
Delivery Time: | 3 days |
Packaging Details: | piping |
Photosensitivity (typical value): | 0.5A /W |
Dark current (Max.): | 50 pA |
Rise time (typical value): | 0.2μs |
Junction capacitance (typical): | 65 pF |
Company Info. |
ShenzhenYijiajie Electronic Co., Ltd. |
Verified Supplier |
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Product List |
Product Description:
S1337-16BQ Low Capacitance Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands
Features:
Receiving surface 5.9 × 1.1mm
Encapsulated ceramics
Package category --
Refrigeration uncooled type
Reverse voltage (Max.) 5 V
Spectral response range 190 to 1100 nm
Maximum sensitivity wavelength (typical value) 960 nm
Photosensitivity (typical value) 0.5A /W
Dark current (Max.) 50 pA
Rise time (typical value) 0.2μs
Junction capacitance (typical) 65 pF
Noise equivalent power (typical value) 1.0×10-14 W/Hz1/2
Typical values of measurement conditions Ta=25°C, photosensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated
Specifications:
Spectral response range | 190 to 1100 nm |
Maximum sensitivity wavelength (typical value) | 960 nm |
Photosensitivity (typical value) | 0.5A /W |
Dark current (Max.) | 50 pA |
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