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YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band

Categories Infrared Photoelectric Sensor
Brand Name: HAMAMATSU
Model Number: S1227-1010BQ
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 2200
Delivery Time: 3 days
Packaging Details: piping
Receiving surface: 10 × 10 mm
Package: Ceramic
Refrigeration: Uncooled type
Reverse voltage (Max.): 5V
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YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band

Product Description:

S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band


Features:

Detailed parameter

Receiving surface 10 × 10 mm

Encapsulated ceramics

Package category --

Refrigeration uncooled type

Reverse voltage (Max.) 5 V

Spectral response range 190 to 1000 nm

Maximum sensitivity wavelength (typical value) 720 nm

Photosensitivity (typical value) 0.36A /W

Dark current (Max.) 50 pA

Rise time (typical value) 7 μs

Junction capacitance (typical value) 3000 pF

Noise equivalent power (typical value) 8.0×10-15 W/Hz1/2

Typical values of measurement conditions Ta=25°C, photosensitivity: λ = 720 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated


Specifications:

Spectral response range190 to 1100 nm
Maximum sensitivity wavelength (typical value)960 nm
Photosensitivity (typical value)0.5A /W
Dark current (Max.)20 pA


Quality YJJ S1227-1010BQ Silicon Photodiode Is Suitable For Precision Photometric Suppression Of Infrared Sensitivity In The Ultraviolet To Visible Band for sale
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