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YJJ S12053-10 Silicon APD Avalanche Photodiode Short Wavelength Type APD

Categories Infrared Photoelectric Sensor
Brand Name: HAMAMATSU
Model Number: S12053-10
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 2200
Delivery Time: 3 days
Packaging Details: piping
Dark current (Max.): 5 nA
Cut-off frequency (typical value): 900 MHz
Junction capacitance (typical): 2 pF
Breakdown voltage (typical value): 150V
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YJJ S12053-10 Silicon APD Avalanche Photodiode Short Wavelength Type APD

Product Description:

S12053-10 Silicon APD Avalanche Photodiode Short Wavelength Type APD


Features:

peculiarity

- High sensitivity and low noise in the UV to visible range

Type Short wavelength type

(Low bias operation)

Receiving surface φ0.2mm

Encapsulation metal

Package category TO-18

Maximum sensitivity wavelength (typical value) 620 nm

Sensitivity wavelength range 200 to 1000 nm

Photosensitivity (typical value) 0.42 A/W

Dark current (Max.) 5 nA

Cut-off frequency (typical value) 900 MHz

Junction capacitance (typical) 2 pF

Breakdown voltage (typical value) 150 V

Breakdown voltage temperature coefficient (typical value) 0.14 V/°C

Gain rate (typical value) 50

Measurement conditions Typical value Ta = 25°C, unless otherwise stated,

Sensitivity: λ = 620 nm, M = 1


Specifications:

Reverse voltage (Max.)5 nA
Spectral response range200 to 1000 nm
Maximum sensitivity wavelength (typical value)620 nm
Gain rate (typical value)50


Quality YJJ S12053-10 Silicon APD Avalanche Photodiode Short Wavelength Type APD for sale
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