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YJJ S3071 large Area High Speed Silicon PIN Photodiode

Categories Infrared Photoelectric Sensor
Brand Name: HAMAMATSU
Model Number: S3071
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 2200
Delivery Time: 3 days
Packaging Details: piping
Receiving surface: φ5.0mm
Encapsulation: metal
Package category: TO-8
Refrigeration: Uncooled type
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YJJ S3071 large Area High Speed Silicon PIN Photodiode

Product Description:

S3071 large Area High Speed Silicon PIN Photodiode


Features:

Large area high speed silicon PIN photodiode

The S3071 is a silicon PIN photodiode with a relatively large light-receiving surface, but provides excellent frequency response at 40 MHz. This photodiode is suitable for spatial light transmission (free space optical elements) and high-speed pulsed light detection.

peculiarity

- Receiving surface size: φ5.0mm

- Cut-off frequency: 40 MHz (VR=24 V)

- High reliability: TO-8 metal package

Receiving surface φ5.0mm
Encapsulation metal
Package category TO-8
Refrigeration uncooled type
Reverse voltage (Max.) 50 V
Spectral response range 320 to 1060 nm
Maximum sensitivity wavelength (typical value) 920 nm
Photosensitivity (typical value) 0.54 A/W
Dark current (Max.) 10000 pA
Cut-off frequency (typical value) 40 MHz
Junction capacitance (typical) 18 pF
Noise equivalent power (typical value) 2.1×10-14 W/Hz1/2
Measurement conditions Ta = 25°C, typical value, sensitivity: λ = 780 nm, dark current: VR = 24 V, cutoff frequency: VR = 24 V, junction capacitance: VR = 24 V, f = 1 MHz, λ = λp, noise equivalent power: VR = 24 V, λ = λp, unless otherwise noted

Specifications:

Reverse voltage (Max.)50 V
Spectral response range320 to 1060 nm
Maximum sensitivity wavelength (typical value)920 nm
Photosensitivity (typical value)0.54 A/W


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