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VS-GT80DA120U Insulated Gate Bipolar Transistor Vishay Semiconductors

Categories IGBT Modules
Description: IGBT MOD 1200V 139A 658W SOT227
Category: Discrete Semiconductor ProductsTransistorsIGBTsIGBT Modules
Current - Collector (Ic) (Max): 139 A
Product Status: Active
Mounting Type: Chassis Mount
Package: Bulk
Series: HEXFRED®
Package / Case: SOT-227-4, miniBLOC
Vce(on) (Max) @ Vge, Ic: 2.55V @ 15V, 80A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Supplier Device Package: SOT-227
Mfr: Vishay General Semiconductor - Diodes Division
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Collector Cutoff (Max): 100 µA
IGBT Type: Trench
Power - Max: 658 W
Input: Standard
Input Capacitance (Cies) @ Vce: 4.4 nF @ 25 V
Configuration: Single
NTC Thermistor: No
Base Product Number: GT80
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VS-GT80DA120U Insulated Gate Bipolar Transistor Vishay Semiconductors

IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227

Quality VS-GT80DA120U  Insulated Gate Bipolar Transistor  Vishay Semiconductors for sale
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