Sign In | Join Free | My frbiz.com
frbiz.com
Products
Search by Category
Home > Electrical Instruments >

NCV20084DTBR2G onsemi

Categories Onsemi Ic
Description: NCV20084DTBR2G onsemi TSSOP-8
  • Haven't found right suppliers
  • Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
  • And this service is free of charge.
  • we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!
Submit Buying Request
  • Product Details
  • Company Profile

NCV20084DTBR2G onsemi

Here is a suggested product introduction for the ON Semiconductor NCV20084DTBR2G Power MOSFET:

NCV20084DTBR2G

The NCV20084DTBR2G Power MOSFET from ON Semiconductor combines ultra-low RDS(on) performance with a compact PowerDI-6 package. As a 20A N-channel MOSFET optimized for power circuits with high density demands, it maximizes current handling in confined spaces.

Key Features:

  • 30V maximum drain-source voltage rating
  • 20A continuous drain current capability
  • 34mΩ typical RDS(on)
  • Space-saving PowerDI-6 package
  • Low 2.5°C/W thermal resistance
  • Extended -55°C to 175°C temperature rating
  • Optimized for DC-DC converters, point-of-load supplies
  • Enables maximum power density and efficiency

PowerDI-6 package achieves industry-leading current density within tight footprints.

Ultra-low RDS(on) maximizes conversion efficiencies even with rigorous size constraints.

Wide operating temperature range facilitates demanding industrial applications.

Simply provides the ultimate combination of high performance and miniaturization.

Ideal for next-generation compact power supply modules optimized for space.

Allows innovations that break through boundaries of integration density.

Quality NCV20084DTBR2G      onsemi for sale
Send your message to this supplier
 
*From:
*To: ZhongHao Industry Limited
*Subject:
*Message:
Characters Remaining: (0/3000)
 
Inquiry Cart 0