NCS20094DR2G onsemi

Here is a potential introduction for the ON Semiconductor NCS20094DR2G Dual 90A N-Channel MOSFET:

NCS20094DR2G

The NCS20094DR2G is a high-power dual N-channel MOSFET solution from ON Semiconductor capable of reliably switching up to 90A per channel. Available in an industry-standard HVSO-8 package, it provides a rugged and optimized solution for controlling substantial load currents across two independent channels.

Key Features:

• 80V maximum drain-source voltage rating per channel
• 90A continuous drain current per channel
• 0.19Ω typical RDS(on) per channel
• Integrated current balancing and undervoltage lockout
• Reliable HVSO-8 package withstands heavy stresses
• -40°C to 150°C operating temperature range

Enables robust dual 90A switching in a rugged through-hole package.

Independent high-current channels maximize design flexibility.

Ultra-low resistance enables high-efficiency power distribution.

On-chip safeguards simplify designs handling significant switching loads.

Package withstands stresses from heavy industrial environments.

Ideal for high-power applications such as welding, 3-phase inverters.

Simplifies partitioning of dual 90A load control requirements.

Density, ruggedness and capability optimized for heavy load applications.

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