NCS20081SQ2T2G onsemi

Here is a potential introduction for the ON Semiconductor NCS20081SQ2T2G P-channel MOSFET:

NCS20081SQ2T2G

The NCS20081SQ2T2G is a compact P-channel MOSFET from ON Semiconductor that offers high current switching capability in an extremely space-efficient 2x2mm DFN package. As a low voltage switch, it enables dense power control layouts where board area is extremely limited.

Key Features:

• 60V maximum drain-source voltage
• 8A continuous drain current rating
• Ultra-low 2.3mΩ typical RDS(on)
• 2x2mm DFN package with exposed pad
• -40°C to 150°C operating temperature range

Ideal for extremely tight board space load switch applications.

Allows high current switching with minimal conduction losses.

Exposed pad maximizes heat transfer from 8A loads in tiny package.

Rugged rating supports industrial and automotive power distribution.

One of the highest current DFN MOSFETs for critical space budgets.

Minimizes footprint while delivering best-in-class RDS(on) performance.

Enables sophisticated power control even in most density-constrained designs.

Facilitates extremely efficient switching in power systems with no wasted space.

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