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| Categories | Flash Memory IC Chip |
|---|---|
| Brand Name: | Ti |
| Model Number: | CSD17308Q3 |
| MOQ: | Contact us |
| Price: | Contact us |
| Payment Terms: | Paypal, Western Union, TT |
| Supply Ability: | 50000 Pieces per Day |
| Delivery Time: | The goods will be shipped within 3 days once received fund |
| Packaging Details: | SON8 |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| CSD17308Q3: | 3.9 nC |
| Vgs - Gate-Source Voltage: | 8 V |
CSD17308Q3 CSD17308Q3T Mosfet Power Transistor MOSFET 30V NCh NexFET Pwr MOSFET
1 Features
Ultra-Low Qg and Qgd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
VSON 3.3 mm × 3.3 mm Plastic Package
2 Applications
Notebook Point of Load
Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
3 Description
This 30-V, 8.2-mΩ, 3.3 mm × 3.3 mm VSON NexFETTM power MOSFET is designed to minimize losses in power conversion applications and optimized for 5-V gate drive applications.
Product Summary
TA = 25°C | VALUE | UNIT | ||
VDS | Drain-to-source voltage | 30 | V | |
Qg | Gate charge total (4.5 V) | 3.9 | nC | |
Qgd | Gate charge gate to drain | 0.8 | nC | |
RDS(on) | Drain-to-source on resistance | VGS = 3 V | 12.5 | mΩ |
VGS = 4.5 V | 9.4 | mΩ | ||
VGS = 8 V | 8.2 | mΩ | ||
VGS(th) | Threshold voltage | 1.3 | V | |
Ordering Information
DEVICE | QTY | MEDIA | PACKAGE | SHIP |
CSD17308Q3 | 2500 | 13-Inch Reel | SON 3.3 mm × 3.3 mm Plastic Package | Tape and Reel |
Absolute Maximum Ratings
TA = 25°C unless otherwise stated | VALUE | UNIT | |
VDS | Drain-to-source voltage | 30 | V |
VGS | Gate-to-source voltage | +10 / –8 | V |
ID | Continuous Drain Current (Package Limited) | 50 | A |
Continuous drain current, TC = 25°C | 44 | ||
Continuous drain current(1) | 14 | ||
IDM | Pulsed drain current, TA = 25°C(2) | 167 | A |
PD | Power dissipation(1) | 2.7 | W |
Power Dissipation, TC = 25°C | 28 | ||
TJ, Tstg | Operating Junction and Storage Temperature Range | –55 to 150 | °C |
EAS | Avalanche energy, single pulse ID =36A,L=0.1mH,RG =25Ω | 65 | mJ |
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