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CSD18504Q5A N Channel Mos Field Effect Transistor 6.6 MOhms Logic Level RoHS Compliant

Categories	Flash Memory IC Chip
Brand Name:	Ti
Model Number:	CSD18504Q5A
MOQ:	Contact us
Price:	Contact us
Payment Terms:	Paypal, Western Union, TT
Supply Ability:	50000 Pieces per Day
Delivery Time:	The goods will be shipped within 3 days once received fund
Packaging Details:	SON8
Description:	MOSFET N-CH 40V 15A/50A 8VSON
Channel Mode:	Enhancement
Configuration:	Single
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Transistor Polarity:	N-Channel
N-Channel:	6.6 mOhms

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Company Info.

ChongMing Group (HK) Int'l Co., Ltd

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CSD18504Q5A Mosfet Power Transistor MOSFET 40V N-Channel NexFET Power MOSFET

1 Features

2 Applications

3 Description

This 5.3 mΩ, SON 5 × 6 mm, 40 V NexFETTM power MOSFET is designed to minimize losses in power conversion applications.

Product Summary

TA = 25°C		TYPICAL VALUE		UNIT
VDS	Drain-to-Source Voltage	40		V
Qg	Gate Charge Total (4.5 V)	7.7		nC
Qgd	Gate Charge Gate-to-Drain	2.4		nC
RDS(on)	Drain-to-Source On-Resistance	VGS = 4.5 V	7.5	mΩ
RDS(on)	Drain-to-Source On-Resistance	VGS =10V	5.3	mΩ
VGS(th)	Threshold Voltage	1.9		V

Ordering Information

Absolute Maximum Ratings

TA = 25°C		VALUE	UNIT
VDS	Drain-to-Source Voltage	40	V
VGS	Gate-to-Source Voltage	±20	V
ID	Continuous Drain Current (Package limited)	50	A
	Continuous Drain Current (Silicon limited), TC = 25°C	75
	Continuous Drain Current(1)	15
IDM	Pulsed Drain Current(2)	275	A
PD	Power Dissipation(1)	3.1	W
PD	Power Dissipation, TC = 25°C	77	W
TJ, Tstg	Operating Junction and Storage Temperature Range	–55 to 150	°C
EAS	Avalanche Energy, single pulse ID =43A,L=0.1mH,RG =25Ω	92	mJ

Product Tags:

mosfet motor control circuit

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