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2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor

Categories	Flash Memory IC Chip
Brand Name:	TI
Model Number:	2N7002LT1G
MOQ:	Contact us
Price:	Contact us
Payment Terms:	Paypal, Western Union, TT
Supply Ability:	50000 Pieces per Day
Delivery Time:	The goods will be shipped within 3 days once received fund
Packaging Details:	SOT23-3
Description:	N-Channel 60 V 115mA (Tc) 225mW (Ta) Surface Mount SOT-23-3 (TO-236)
Product Type:	MOSFET
Subcategory:	MOSFETs
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Rds On - Drain-Source Resistance:	7.5 Ohms
Vgs th - Gate-Source Threshold Voltage:	1 V

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Company Info.

ChongMing Group (HK) Int'l Co., Ltd

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2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor

2N7002LT1G Mosfet Power Transistor MOSFET 60V 115mA N-Channel

Features

• 2V Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable (2V7002L)

• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

MAXIMUM RATINGS

Rating	Symbol	Value	Unit
Drain−Source Voltage	VDSS	60	Vdc
Drain−Gate Voltage (RGS = 1.0 MW)	VDGR	60	Vdc
Drain Current − Continuous TC = 25°C (Note 1) − Continuous TC = 100°C (Note 1) − Pulsed (Note 2)	ID ID IDM	± 115 ± 75 ± 800	mAdc
Gate−Source Voltage − Continuous − Non−repetitive (tp ≤ 50 ms)	VGS VGSM	± 20 ± 40	Vdc Vpk

THERMAL CHARACTERISTICS

Characteristic	Symbol	Max	Unit
Total Device Dissipation FR−5 Board (Note 3) TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient	PD RqJA	225 1.8 556	mW mW/°C °C/W
Total Device Dissipation (Note 4) Alumina Substrate, TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient	PD RqJA	300 2.4 417	mW mW/°C °C/W
Junction and Storage Temperature	TJ, Tstg	− 55 to +150	°C

Product Tags:

p channel mosfet driver circuit

mosfet motor control circuit

2N7002LT1G N Channel Mosfet Transistor , 115mA Mos Field Effect Transistor

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