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S16765-01MS Silicon Photodiode Low Dark Current Pre Molded Package

Categories Infrared Photoelectric Sensor
Brand Name: Hamamatsu
Model Number: S16765-01MS
Place of Origin: Japan
MOQ: 1
Payment Terms: L/C, D/A, D/P, T/T, Western Union, MoneyGram
Supply Ability: 3000/pcs/month
Delivery Time: 3-5work days
Packaging Details: Tubes of
Price: Negotiable
Photosensitive area: 2.8 × 2.4 mm
Packaging: Plastic
Cooling: Uncooled
Spectral response range: 320 to 1000 nm
Peak sensitivity wavelength (typical): 720 nm
Sensitivity (typical): 0.4 A/W
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S16765-01MS Silicon Photodiode Low Dark Current Pre Molded Package

S16765-01MS Silicon Photodiode Low Dark Current Pre Molded Package


Features:

Hamamatsu photosensitive photodiode silicon photocell

High performance, High reliability Si PIN photodiodes

High performance, high reliability silicon PIN photodiode

Parameter name value

Encapsulated ceramic

Sensitive zone diameter/length mm 2.8

The minimum wavelength is 320 nm

The maximum wavelength is 730 nm

The peak wavelength is 560 nm

Peak sensitivity A/W 0.3

Maximum dark current (nA) 0.01

Rsh Ω (G) 100

TR (us) 2.5

CT (pF) 700

Part of the photodetector covers common photodiodes, avalanche diodes, and photomultiplier tubes that form from x-rays to ultraviolet, visible light

, near infrared, up to 3000nm in the middle infrared band;Package form from Chip Level to Components Level, Module

Level of various semiconductor laser diodes

Professional sales of Japan hamamatsu optoelectronic devices, optical reception, silicon photodiode, photoelectric detection devices optical detection components


Specifications:

Welding temperature260℃
Light source power0.1u~100mW/cm²
Spectral detection range25℃, 10% of R
Reverse voltage3V

Quality S16765-01MS Silicon Photodiode Low Dark Current Pre Molded Package for sale
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