| Sign In | Join Free | My frbiz.com |
|
| Sign In | Join Free | My frbiz.com |
|
| Categories | Tip Power Transistors |
|---|---|
| Place of Origin: | ShenZhen China |
| Brand Name: | OTOMO |
| Certification: | RoHS、SGS |
| MOQ: | 1000-2000 PCS |
| Price: | Negotiated |
| Packaging Details: | Boxed |
| Delivery Time: | 1 - 2 Weeks |
| Payment Terms: | L/C T/T Western Union |
| Supply Ability: | 18,000,000PCS / Per Day |
| Model Number: | D882 |
| Collector-Base VoltageCollector-Base Voltage: | 40v |
| Collector-Emitter Voltage: | 30v |
| Emitter-Base Voltage: | 6V |
| Power mosfet transistor: | TO-126 Plastic-Encapsulate |
| Material: | Silicon |
| Type: | Triode Transistor |
| Company Info. |
| Beijing Silk Road Enterprise Management Services Co.,LTD |
| Verified Supplier |
| View Contact Details |
| Product List |
TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN)
Power Dissipation
MARKING
D882=Device code
Solid dot = Green molding compound device, if none, the normal device XX=Code
ORDERING INFORMATION
| Part Number | Package | Packing Method | Pack Quantity |
| D882 | TO-126 | Bulk | 200pcs/Bag |
| D882-TU | TO-126 | Tube | 60pcs/Tube |
MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 40 | V |
| VCEO | Collector-Emitter Voltage | 30 | V |
| VEBO | Emitter-Base Voltage | 6 | V |
| IC | Collector Current -Continuous | 3 | A |
| PC | Collector Power Dissipation | 1.25 | W |
| TJ | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55-150 | ℃ |
Ta=25 Š unless otherwise specified
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC = 100μA, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 10mA, IB=0 | 30 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= 100μA, IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB= 40 V, IE=0 | 1 | µA | ||
| Collector cut-off current | ICEO | VCE= 30 V, IB=0 | 10 | µA | ||
| Emitter cut-off current | IEBO | VEB= 6 V, IC=0 | 1 | µA | ||
| DC current gain | hFE | VCE= 2 V, IC= 1A | 60 | 400 | ||
| Collector-emitter saturation voltage | VCE (sat) | IC= 2A, IB= 0.2 A | 0.5 | V | ||
| Base-emitter saturation voltage | VBE (sat) | IC= 2A, IB= 0.2 A | 1.5 | V | ||
Transition frequency | fT | VCE= 5V, IC=0.1A f =10MHz | 90 | MHz |
| Rank | R | O | Y | GR |
| Range | 60-120 | 100-200 | 160-320 | 200-400 |
Typical Characteristics
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 2.500 | 2.900 | 0.098 | 0.114 |
| A1 | 1.100 | 1.500 | 0.043 | 0.059 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.450 | 0.600 | 0.018 | 0.024 |
| D | 7.400 | 7.800 | 0.291 | 0.307 |
| E | 10.600 | 11.000 | 0.417 | 0.433 |
| e | 2.290 TYP | 0.090 TYP | ||
| e1 | 4.480 | 4.680 | 0.176 | 0.184 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 15.300 | 15.700 | 0.602 | 0.618 |
| L1 | 2.100 | 2.300 | 0.083 | 0.091 |
| P | 3.900 | 4.100 | 0.154 | 0.161 |
| Φ | 3.000 | 3.200 | 0.118 | 0.126 |
|
3DD13005 Tip Power Transistors Switch Emitter Base Voltage 9V High Efficiency
RoHS Tip Power Transistors NPN Power Transistor Collector Emitter Voltage 30v
MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type
3DD13005 Tip Power Transistors Switch Emitter Base Voltage 9V High Efficiency
MJE13003 Tip Power Transistors NPN Silicon Material Triode Transistor Type
