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LN LiNbO3 Q Switch Crystals Trigonal Substrate Material For Integrated Optoelectronic Devices

Categories Q Switch Crystals
Place of Origin: China
Brand Name: CRYLINK
Certification: Iso9001
MOQ: 1 Pieces
Price: negotiation
Packaging Details: Carton
Delivery Time: 3-4 weeks
Payment Terms: TT
Supply Ability: 100 pieces /month
Model Number: CRYLINK-LiNbO3 Crystal
Name: LiNbO3(LN)
Crystal structure: trigonal
Space group: R3C
Density: 4.64 g/cm3
Mohs hardness: 5
Optical homogeneity: ~ 5 x 10-5 / cm
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LN LiNbO3 Q Switch Crystals Trigonal Substrate Material For Integrated Optoelectronic Devices

LiNbO3 crystal has been widely used in optical waveguide and optical communication technology because of its excellent electro-optical properties. It is an ideal substrate material for many integrated optoelectronic devices. Because of the large electro-optic coefficient of LiNbO3, the half-wave voltage is low. The electro-optic effect of LiNbO3 crystal is usually used to modulate the optical signal. Electro-optic modulation is divided into longitudinal and transverse, and LiNbO3 is mainly used in transverse modulation. It has been widely used in medium and low power solid-state lasers.

Physical and optical properties

Chemical formulaLiNbO3
Crystal structuretrigonal
Space groupR3C
Density4.64 g/cm3
Mohs hardness5
Optical homogeneity~ 5 x 10-5 / cm
Transparency range420 5200 nm
Absorption coefficient~ 0.1 % / cm @ 1064 nm
Refractive indices at 1064 nmne = 2.146, no = 2.220 @ 1300 nm
ne = 2.156, no = 2.232 @ 1064 nm
ne = 2.203, no = 2.286 @ 632.8 nm
Sellmeier equations (, m)no2 = 4.9048 + 0.11768 / (2 0.04750) 0.0271692
ne2 = 4.5820 + 0.099169 / (2 0.04443) 0.0219502
Thermal expansion coefficient @ 25 °C//a, 2.0 x 10-6 / K
//c, 2.2 x 10-6 / K
Thermal conductivity~ 5 W/m/K @ 25 °C
Thermal optical coefficientdno/dT = -0.874 x 10-6 / K at 1.4 m
dne/dT = 39.073 x 10-6 / K at 1.4 m

LiNbO3 General specification for Q-Switch

Refractive retardation=Lnr22V/d
Electro-optic coefficientsR33=32pm/V
R31=10pm/V
R22=6.8 pm/V
Aperture4x4mm ~ 9x9mm
Length15~25mm
Tolerance of size+/-0.1mm
Chamfer<0.5mm x 45°
Accuracy of orientation<5 arc min
Parallelism<10 arc sec
Flatnessl/8 at 632.8 nm
Wavefront Distortion<l/4 at 632.8 nm
Extinction Ratio>400:1 @ 633nm, dia 6mm beam

LiNbO3 specification for Optical waveguide

Operating wavelength range1.525-1.605m
Extinction ratio<20dB
Half wave voltage<6V
DC bias voltage<8V
Input characteristic impedance50
Light reflection≤-50dB
Maximum input electric power20dBm
Maximum input optical power10-100mW
Storage temperature-40-85℃
Operating temperature-40-70℃
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Quality LN  LiNbO3 Q Switch Crystals Trigonal Substrate Material For Integrated Optoelectronic Devices for sale
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