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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

Categories Mos Field Effect Transistor
Place of Origin: ShenZhen China
Brand Name: Hua Xuan Yang
Certification: RoHS、SGS
MOQ: 1000-2000 PCS
Price: Negotiated
Packaging Details: Boxed
Delivery Time: 1 - 2 Weeks
Payment Terms: L/C T/T Western Union
Supply Ability: 18,000,000PCS / Per Day
Model Number: 50N06P/T
Product name: Mosfet Power Transistor
Junction temperature:: 150℃
Material: Silicon
Case: Tape/Tray/Reel
Type: mosfet transistor
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50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃

50N06P/T 200V N-Channel Enhancement Mode MOSFET

Product Summary


The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.
Quality 50N06P/T 60V Mos Field Effect Transistor Silicon Material Junction Temperature 150℃ for sale
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