SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V

Name: SOT893L A44 Silicon Power Transistor NPN Collector Base Voltage 400V
Brand: Hua Xuan Yang
Price: 1 USD

SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V

Categories	Silicon Power Transistor
Place of Origin:	ShenZhen China
Brand Name:	Hua Xuan Yang
Certification:	RoHS、SGS
MOQ:	1000-2000 PCS
Price:	Negotiated
Packaging Details:	Boxed
Delivery Time:	1 - 2 Weeks
Payment Terms:	L/C T/T Western Union
Supply Ability:	18,000,000PCS / Per Day
Model Number:	SOT-89-3L A44
Collector-Base Voltage:	400V
Junction Temperature:	150 ℃
Tstg:	-55～+150℃
Material:	Silicon
Collector Current:	600 mA
Collector Power Dissipation:	500mW

Contact Now

Add to Cart

Company Info.

Shenzhen Hua Xuan Yang Electronics Co.,Ltd

View Contact Details

Haven't found right suppliers
Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
And this service is free of charge.
we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!

Submit Buying Request

SOT-89-3L Plastic-Encapsulate Transistors A44 TRANSISTOR (NPN)

FEATURE

Low Collector-Emitter Saturation Voltage

High Breakdown Voltage

Marking :A44

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	400	V
VCEO	Collector-Emitter Voltage	400	V
VEBO	Emitter-Base Voltage	6	V
I_C	Collector Current -Continuous	200	mA
ICM	Collector Current -Pulsed	300	mA
P_C	Collector Power Dissipation	500	mW
RθJA	Thermal Resistance from Junction to Ambient	250	℃/W
T_j	Junction Temperature	150	℃
Tstg	Storage Temperature	-55~+150	℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	T est conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=100µA,I_E=0	400			V
Collector-emitter breakdown voltage	V(BR)CEO*	I_C=1mA,I_B=0	400			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=10µA,I_C=0	6			V
Collector cut-off current	ICBO	V_CB=400V,I_E=0			0.1	µA
Emitter cut-off current	IEBO	V_EB=4V,I_C=0			0.1	µA
DC current gain	hFE(1)*	V_CE=10V, I_C=1mA	40
	hFE(2)*	V_CE=10V, I_C=10mA	50		200
	hFE(3)*	V_CE=10V, I_C=50mA	45
	hFE(4)*	V_CE=10V, I_C=100mA	40
Collector-emitter saturation voltage	VCE(sat)*	I_C=1mA,I_B=0.1mA			0.4	V
		I_C=10mA,I_B=1mA			0.5	V
		I_C=50mA,I_B=5mA			0.75	V
Base-emitter saturation voltage	VBE(sat)*	I_C=10mA,I_B=1mA			0.75	V
Collector output capacitance	Cob	V_CB=20V, I_E=0, f=1MHz			7	pF
Emitter input capacitance	Cib	V_BE=0.5V, I_C=0, f=1MHz			130	pF

Typical Characteristics

Package Outline Dimensions

SOT-89-3L Suggested Pad Layout

SOT-89-3L Tape and Reel

Product Tags:

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	Shenzhen Hua Xuan Yang Electronics Co.,Ltd
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!