| Sign In | Join Free | My frbiz.com |
|
| Sign In | Join Free | My frbiz.com |
|
| Categories | Tip Power Transistors |
|---|---|
| Place of Origin: | ShenZhen China |
| Brand Name: | Hua Xuan Yang |
| Certification: | RoHS、SGS |
| MOQ: | 1000-2000 PCS |
| Price: | Negotiated |
| Packaging Details: | Boxed |
| Delivery Time: | 1 - 2 Weeks |
| Payment Terms: | L/C T/T Western Union |
| Supply Ability: | 18,000,000PCS / Per Day |
| Model Number: | B772 |
| Collector Current -Continuous: | 3A |
| VCEO: | 30V |
| VCBO: | 40V |
| Product name: | semiconductor triode type |
| Tj: | 150℃ |
| Type: | Triode Transistor |
TO-126 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN)
Power Dissipation
MARKING
D882=Device code
Solid dot = Green molding compound device, if none, the normal device XX=Code
ORDERING INFORMATION
| Part Number | Package | Packing Method | Pack Quantity |
| D882 | TO-126 | Bulk | 200pcs/Bag |
| D882-TU | TO-126 | Tube | 60pcs/Tube |
MAXIMUM RATINGS (Ta =25 Š unless otherwise noted)
| Symbol | Parameter | Value | Unit |
| VCBO | Collector-Base Voltage | 40 | V |
| VCEO | Collector-Emitter Voltage | 30 | V |
| VEBO | Emitter-Base Voltage | 6 | V |
| IC | Collector Current -Continuous | 3 | A |
| PC | Collector Power Dissipation | 1.25 | W |
| TJ | Junction Temperature | 150 | ℃ |
| Tstg | Storage Temperature | -55-150 | ℃ |
Ta=25 Š unless otherwise specified
| Parameter | Symbol | Test conditions | Min | Typ | Max | Unit |
| Collector-base breakdown voltage | V(BR)CBO | IC = 100μA, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC = 10mA, IB=0 | 30 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE= 100μA, IC=0 | 6 | V | ||
| Collector cut-off current | ICBO | VCB= 40 V, IE=0 | 1 | µA | ||
| Collector cut-off current | ICEO | VCE= 30 V, IB=0 | 10 | µA | ||
| Emitter cut-off current | IEBO | VEB= 6 V, IC=0 | 1 | µA | ||
| DC current gain | hFE | VCE= 2 V, IC= 1A | 60 | 400 | ||
| Collector-emitter saturation voltage | VCE (sat) | IC= 2A, IB= 0.2 A | 0.5 | V | ||
| Base-emitter saturation voltage | VBE (sat) | IC= 2A, IB= 0.2 A | 1.5 | V | ||
Transition frequency | fT | VCE= 5V, IC=0.1A f =10MHz | 90 | MHz | ||
| Rank | R | O | Y | GR |
| Range | 60-120 | 100-200 | 160-320 | 200-400 |
Package Outline Dimensions
| Symbol | Dimensions In Millimeters | Dimensions In Inches | ||
| Min | Max | Min | Max | |
| A | 2.500 | 2.900 | 0.098 | 0.114 |
| A1 | 1.100 | 1.500 | 0.043 | 0.059 |
| b | 0.660 | 0.860 | 0.026 | 0.034 |
| b1 | 1.170 | 1.370 | 0.046 | 0.054 |
| c | 0.450 | 0.600 | 0.018 | 0.024 |
| D | 7.400 | 7.800 | 0.291 | 0.307 |
| E | 10.600 | 11.000 | 0.417 | 0.433 |
| e | 2.290 TYP | 0.090 TYP | ||
| e1 | 4.480 | 4.680 | 0.176 | 0.184 |
| h | 0.000 | 0.300 | 0.000 | 0.012 |
| L | 15.300 | 15.700 | 0.602 | 0.618 |
| L1 | 2.100 | 2.300 | 0.083 | 0.091 |
| P | 3.900 | 4.100 | 0.154 | 0.161 |
| Φ | 3.000 | 3.200 | 0.118 | 0.126 |
|
A94 PNP Tip Power Transistors Fast Switching Silicon Semiconductor Triode Type
D965 NPN Transistor Circuit , NPN Power Transistor High Performance
M28S NPN Tip Power Transistors TO-92 Plastic Encapsulated PD 625mW
3DD13003B Tip Power Transistors Emitter Base Voltage 9v Low Rdson
A92 PNP Transistor Switch High Speed Switching Surface Mount +
TO-92 A42 Tip Power Transistors Silicon Semiconductor Triode Type
3DD13002B High Power Transistor Circuit VCEO 400V Low Saturation Voltage
2N5551 Tip Power Transistors For Electronic Components VCBO 180V
3DD13003 NPN Transistor Switch , Tip Series Transistors 1.25W Collector Dissipation
TO-252Tip Power Transistors 3DD13002 Transistor NPN
