Sign In | Join Free | My frbiz.com
frbiz.com
Products
Search by Category
Home > Advertising Lights >

N Type , Si-Doped Single Crystal Gallium Arsenide Wafer , 4”, Test Grade

Categories GaAs Wafer
Brand Name: PAM-XIAMEN
Place of Origin: China
MOQ: 1-10,000pcs
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Delivery Time: 5-50 working days
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
product name: polycrystalline GaAs wafer
Wafer Diamter: 4 inch
Package: Single wafer container or cassette
Grade: Test Grade
usage: LED Application
keyword: GaAs Gallium Arsenide wafer
  • Haven't found right suppliers
  • Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
  • And this service is free of charge.
  • we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!
  • Submit Buying Request
    • Product Details
    • Company Profile

    N Type , Si-Doped Single Crystal Gallium Arsenide Wafer , 4”, Test Grade

    N Type , Si-Doped Single Crystal Gallium Arsenide Wafer , 4”, Test Grade


    PAM-XIAMEN provides both single crystal and polycrystalline GaAs wafer ( Gallium Arsenide ) for opto-electronics and micro-electronics industry for making LD , LED , microwave circuit and solar cell applications , the wafers is in diameter range from 2" to 6" in various thicknesses and orientations. We offer single crystal GaAs wafer produced by two main growth techniques LEC and VGF method , allowing us to provide customers the widest choice of GaAs material with high uniformity of electrical properties and excellent surface quality . Gallium Arsenide can be supplied as ingots and polished wafer, both conducting and semi-insulating GaAs wafer , mechanical grade and epi ready grade are all available . We can offer GaAs wafer with low EPD value and high surface quality suitable for your MOCVD and MBE applications. PAM-XIAMEN can produce wide range grades: prime grade, test grade, and optical grade. Please contact our engineer team for more wafer information.

    (GaAs)Gallium Arsenide Wafers for LED Applications

    ItemSpecifications
    Conduction TypeSC/n-type
    Growth MethodVGF
    DopantSilicon
    Wafer Diamter4, inch
    Crystal Orientation(100)2°/6°/15° off (110)
    OFEJ or US
    Carrier Concentration

    (0.4~2.5)E18/cm3


    Resistivity at RT(1.5~9)E-3 Ohm.cm
    Mobility

    1500~3000cm2/V.sec


    Etch Pit Density<5000/cm2
    Laser Marking

    upon request


    Surface Finish

    P/E or P/P


    Thickness

    220~450um


    Epitaxy ReadyYes
    PackageSingle wafer container or cassette

    (GaAs)Gallium Arsenide Wafers for LD Applications

    ItemSpecificationsRemarks
    Conduction TypeSC/n-type
    Growth MethodVGF
    DopantSilicon
    Wafer Diamter4, inchIngot or as-cut available
    Crystal Orientation(100)2°/6°/15°off (110)Other misorientation available
    OFEJ or US
    Carrier Concentration(0.4~2.5)E18/cm3
    Resistivity at RT(1.5~9)E-3 Ohm.cm
    Mobility1500~3000 cm2/V.sec
    Etch Pit Density<500/cm2
    Laser Markingupon request
    Surface FinishP/E or P/P
    Thickness220~350um
    Epitaxy ReadyYes
    PackageSingle wafer container or cassette

    Properties of GaAs Crystal

    PropertiesGaAs
    Atoms/cm34.42 x 1022
    Atomic Weight144.63
    Breakdown Fieldapprox. 4 x 105
    Crystal StructureZincblende
    Density (g/cm3)5.32
    Dielectric Constant13.1
    Effective Density of States in the Conduction Band, Nc (cm-3)4.7 x 1017
    Effective Density of States in the Valence Band, Nv (cm-3)7.0 x 1018
    Electron Affinity (V)4.07
    Energy Gap at 300K (eV)1.424
    Intrinsic Carrier Concentration (cm-3)1.79 x 106
    Intrinsic Debye Length (microns)2250
    Intrinsic Resistivity (ohm-cm)108
    Lattice Constant (angstroms)5.6533
    Linear Coefficient of Thermal Expansion,6.86 x 10-6
    ΔL/L/ΔT (1/deg C)
    Melting Point (deg C)1238
    Minority Carrier Lifetime (s)approx. 10-8
    Mobility (Drift)8500
    (cm2/V-s)
    µn, electrons
    Mobility (Drift)400
    (cm2/V-s)
    µp, holes
    Optical Phonon Energy (eV)0.035
    Phonon Mean Free Path (angstroms)58
    Specific Heat0.35
    (J/g-deg C)
    Thermal Conductivity at 300 K0.46
    (W/cm-degC)
    Thermal Diffusivity (cm2/sec)0.24
    Vapor Pressure (Pa)100 at 1050 deg C;
    1 at 900 deg C

    WavelengthIndex
    (µm)
    2.63.3239
    2.83.3204
    33.3169
    3.23.3149
    3.43.3129
    3.63.3109
    3.83.3089
    43.3069
    4.23.3057
    4.43.3045
    4.63.3034
    4.83.3022
    53.301
    5.23.3001
    5.43.2991
    5.63.2982
    5.83.2972
    63.2963
    6.23.2955
    6.43.2947
    6.63.2939
    6.83.2931
    73.2923
    7.23.2914
    7.43.2905
    7.63.2896
    7.83.2887
    83.2878
    8.23.2868
    8.43.2859
    8.63.2849
    8.83.284
    93.283
    9.23.2818
    9.43.2806
    9.63.2794
    9.83.2782
    103.277
    10.23.2761
    10.43.2752
    10.63.2743
    10.83.2734
    113.2725
    11.23.2713
    11.43.2701
    11.63.269
    11.83.2678
    123.2666
    12.23.2651
    12.43.2635
    12.63.262
    12.83.2604
    133.2589
    13.23.2573
    13.43.2557
    13.63.2541

    What is the GaAs Process?

    GaAs wafers must be prepared prior to device fabrication. To start, they must be completely cleaned to remove any damage that might have occurred during the slicing process. The wafers are then Chemically Mechanically Polished/Plaranrized (CMP) for the final material removal stage. This allows for the attainment of super-flat mirror-like surfaces with a remaining roughness on an atomic scale. After that is completed, the wafer is ready for fabrication.


    What is the Basic Parameters at 300 K of GaAs Wafer?

    Crystal structureZinc Blende
    Group of symmetryTd2-F43m
    Number of atoms in 1 cm34.42·1022
    de Broglie electron wavelength240 A
    Debye temperature360 K
    Density5.32 g cm-3
    Dielectric constant (static )12.9
    Dielectric constant (high frequency)10.89
    Effective electron mass me0.063mo
    Effective hole masses mh0.51mo
    Effective hole masses mlp0.082mo
    Electron affinity4.07 eV
    Lattice constant5.65325 A
    Optical phonon energy0.035 eV

    Are You Looking for GaAs substrate?

    PAM-XIAMEN is proud to offer indium phosphide substrate for all different kinds of projects. If you are looking for GaAs wafers, send us enquiry today to learn more about how we can work with you to get you the GaAs wafers you need for your next project. Our group team is looking forward to providing both quality products and excellent service for you!

    Quality N Type , Si-Doped Single Crystal Gallium Arsenide Wafer , 4”, Test Grade for sale
    Send your message to this supplier
     
    From:
    To: XIAMEN POWERWAY ADVANCED MATERIAL CO., LTD.
    Subject:
    Message:
    Characters Remaining: (0/3000)
     
    Inquiry Cart 0

    Home| Products| Suppliers| Quality Suppliers| Site Map |About Us |Contact Us |Help |关于我们 |联系我们

    Copyright © 2009 - 2020 frbiz.com. All rights reserved.