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(10-11) Plane U-GaN Freestanding GaN Crystal Film Substrate

Categories GaN Wafer
Brand Name: PAM-XIAMEN
Place of Origin: China
MOQ: 1-10,000pcs
Price: By Case
Payment Terms: T/T
Supply Ability: 10,000 wafers/month
Delivery Time: 5-50 working days
Packaging Details: Packaged in a class 100 clean room environment, in single container, under a nitrogen atmosphere
Item: PAM-FS-GAN(10-11)-U
product name: U-GaN Freestanding GaN Substrate
Conduction Type: N type
Dimension: 5 x 10 mm2
Thickness: 350 ±25 μm 430±25μm
other name: GaN Wafer
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    (10-11) Plane U-GaN Freestanding GaN Crystal Film Substrate


    (10-11) Plane U-GaN Freestanding GaN Crystal Film Substrate


    PAM-XIAMEN has established the manufacturing technology for freestanding (Gallium Nitride)GaN substrate wafer which is for UHB-LED and LD. Grown by hydride vapour phase epitaxy (HVPE) technology,Our GaN substrate has low defect density and less or free macro defect density.


    PAM-XIAMEN offers full range of GaN and Related III-N Materials including GaN substrates of various orientations and electrical conductivity,crystallineGaN&AlN templates, and custom III-N epiwafers.


    Here Shows Detail Specification:

    (10-11) Plane U-GaN Freestanding GaN Substrate

    ItemPAM-FS-GaN(10-11)-U
    Dimension5 x 10 mm2
    Thickness350 ±25 µm 430 ±25 µm
    Orientation

    (10-11) plane off angle toward A-axis 0 ±0.5°

    (10-11) plane off angle toward C-axis -1 ±0.2°

    Conduction TypeN-type
    Resistivity (300K)< 0.1 Ω·cm
    TTV≤ 10 µm
    BOW-10 µm ≤ BOW ≤ 10 µm
    Surface Roughness

    Front side: Ra<0.2nm, epi-ready;

    Back side: Fine Ground or polished.

    Dislocation DensityFrom 1 x 10 5to 5 x 10 6cm-2
    Macro Defect Density0 cm-2
    Useable Area> 90% (edge exclusion)
    Packageeach in single wafer container, under nitrogen atmosphere, packed in class 100 clean room

    Application of GaN Substrate


    Solid State Lighting:GaN devices are used as ultra high brightness light emitting diodes (LEDs), TVs, automobiles, and general lighting


    DVD Storage: Blue laser diodes


    Power Device: GaN devices are used as various components in high-power and high-frequency power electronics like cellular base stations, satellites, power amplifiers, and inverters/converters for electric vehicles (EV) and hybrid electric vehicles (HEV). GaN’s low sensitivity to ionizing radiation (like other group III nitrides) makes it a suitable material for spaceborne applications such as solar cell arrays for satellites and high-power, high-frequency devices for communication, weather, and surveillance satellites

    Wireless Base Stations: RF power transistors

    Wireless Broadband Access: high frequency MMICs,RF-Circuits MMICs

    Pressure Sensors:MEMS

    Heat Sensors: Pyro-electric detectors

    Power Conditioning: Mixed signal GaN/Si Integration

    Automotive Electronics: High temperature electronics

    Power Transmission Lines: High voltage electronics

    Frame Sensors: UV detectors

    Solar Cells:GaN’s wide band gap covers the solar spectrum from 0.65 eV to 3.4 eV (which is practically the entire solar spectrum), making indium gallium nitride

    (InGaN) alloys perfect for creating solar cell material. Because of this advantage, InGaN solar cells grown on GaN substrates are poised to become one of the most important new applications and growth market for GaN substrate wafers.

    Ideal for HEMTs, FETs

    GaN Schottky diode project: We accept custom spec of Schottky diodes fabricated on the HVPE-grown, free-standing gallium nitride (GaN) layers of n- and p-types.

    Both contacts (ohmic and Schottky) were deposited on the top surface using Al/Ti and Pd/Ti/Au.


    Lattice constant of GaN substrate


    Lattice parameters of gallium nitride were measured using high‐resolution x‐ray diffraction



    GaN,Wurtzite sructure. The lattice constants a vs. temperature.



    GaN,Wurtzite sructure. The lattice constants c vs. Temperature


    Properties of GaN substrate

    PROPERTY / MATERIALCubic (Beta) GaNHexagonal (Alpha) GaN
    StructureZinc BlendeWurzite
    Space GroupF bar4 3mC46v ( = P63mc)
    StabilityMeta-stableStable
    Lattice Parameter(s) at 300K0.450 nma0 = 0.3189 nm
    c0 = 0.5185 nm
    Density at 300K6.10 g.cm-36.095 g.cm-3
    Elastic Moduli at 300 K. . .. . .
    Linear Thermal Expansion Coeff.
    at 300 K
    . . .Along a0: 5.59x10-6 K-1
    Along c0: 7.75x10-6 K-1
    Calculated Spontaneous PolarisationsNot Applicable– 0.029 C m-2
    Bernardini et al 1997
    Bernardini & Fiorentini 1999
    Calculated Piezo-electric CoefficientsNot Applicablee33 = + 0.73 C m-2
    e31 = – 0.49 C m-2
    Bernardini et al 1997
    Bernardini & Fiorentini 1999
    Phonon EnergiesTO: 68.9 meV 
    LO: 91.8 meV
    A1(TO): 66.1 meV
    E1(TO): 69.6 meV
    E2: 70.7 meV
    A1(LO): 91.2 meV
    E1(LO): 92.1 meV
    Debye Temperature 600K (estimated)
    Slack, 1973 
    Thermal Conductivity
    near 300K
    . . .Units: Wcm-1K-1

    1.3,
    Tansley et al 1997b

    2.2±0.2
    for thick, free-standing GaN
    Vaudo et al, 2000

    2.1 (0.5)
    for LEO material
    where few (many) dislocations
    Florescu et al, 2000, 2001

    circa 1.7 to 1.0
    for n=1x1017 to 4x1018cm-3
    in HVPE material
    Florescu, Molnar et al, 2000

    2.3 ± 0.1
    in Fe-doped HVPE material
    of ca. 2 x108 ohm-cm,
    & dislocation density ca. 105 cm-2
    (effects of T & dislocation density also given).
    Mion et al, 2006a, 2006b
    Melting Point. . .. . .
    Dielectric Constant
    at Low/Lowish Frequency
    . . .Along a0: 10.4
    Along c0: 9.5
    Refractive Index2.9 at 3eV
    Tansley et al 1997b
    2.67 at 3.38eV
    Tansley et al 1997b
    Nature of Energy Gap EgDirectDirect
    Energy Gap Eg at 1237K 2.73 eV
    Ching-Hua Su et al, 2002
    Energy Gap Eg at 293-1237 K 3.556 - 9.9x10-4T2 / (T+600) eV
    Ching-Hua Su et al, 2002
    Energy Gap Eg at 300 K3.23 eV
    Ramirez-Flores et al 1994
    .
    3.25 eV
    Logothetidis et al 1994
    3.44 eV
    Monemar 1974
    .
    3.45 eV
    Koide et al 1987
    .
    3.457 eV
    Ching-Hua Su et al, 2002
    Energy Gap Eg at ca. 0 K3.30 eV
    Ramirez-Flores et al1994
    Ploog et al 1995
    3.50 eV
    Dingle et al 1971
    Monemar 1974
    Intrinsic Carrier Conc. at 300 K. . .. . .
    Ionisation Energy of . . . Donor. . . .. . . .
    Electron effective mass me* / m0. . .0.22
    Moore et al, 2002
    Electron Mobility at 300 K
    for n = 1x1017 cm-3:
    for n = 1x1018 cm-3:
    for n = 1x1019 cm-3:
    . . .ca. 500 cm2V-1s-1
    ca. 240 cm2V-1s-1
    ca. 150 cm2V-1s-1

    Rode & Gaskill, 1995
    Tansley et al 1997a
    Electron Mobility at 77 K
    for n = . .
    . . . .. . . .
    Ionisation Energy of Acceptors. . .Mg: 160 meV
    Amano et al 1990

    Mg: 171 meV
    Zolper et al 1995

    Ca: 169 meV
    Zolper et al 1996
    Hole Hall Mobility at 300 K
    for p= . . .
    . . .. . . .
    Hole Hall Mobility at 77 K
    for p= . . .
    . . . .. . .
    .Cubic (Beta) GaNHexagonal (Alpha) GaN

    Application of GaN substrate


    Gallium nitride (GaN), with a direct band gap of 3.4 eV, is a promising material in the development of short-wavelength light emitting devices. Other optical device applications for GaN include semiconductor lasers and optical detectors.

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